AMAT 0010-27432 | 300mm A101 Heating Stand Assembly (Heater ASSY)

Abbreviation: PEDESTAL, PIB, 300MM A101 HEATER ASSY

Brand: Applied Materials (AMAT)

Model: 0010-27432

Type: 300mm (12-inch) wafer heating base / electrostatic chuck heating assembly

Compatible platforms: AMAT Centura / Producer 300mm platform, A101 process chamber (PIB)

Typical processes: PVD (metal deposition), CVD, etching, thermal treatment, etc. for 300mm manufacturing process 

I. Basic Specifications

Wafer size: 300mm (12")

Structure: Integrated base + Built-in heating element + Temperature control sensor + Vacuum sealing + Water cooling channel Material:

Top surface: High-purity ceramic / alumina (low particle size, high temperature resistance, insulation)

Main body: Stainless steel + aluminum alloy (compatible with vacuum chamber)

Weight: Approximately 28.2 kg

Interfaces:

Power cable (heating)

Thermocouple / temperature measurement signal

Water cooling pipeline

Vacuum sealing flange

Core parameters (A101 PIB chamber)

Heating power: Approximately 3.5–5 kW (depending on configuration)

Temperature range: Room temperature to 550°C (PVD commonly 200–450°C)

Temperature control accuracy: ±0.5–1°C (closed-loop thermocouple)

Uniformity: ±1.5°C @ 300mm (ensuring uniformity of film thickness / resistance)

Vacuum grade: 1e-7 Torr (high vacuum compatibility)

Cooling: Built-in water cooling, rapid cooling / thermal stability

 Functionality

Wafer support + heating: Directly place 300mm wafers on it, providing a uniform and stable high-temperature substrate to meet deposition / etching temperature requirements.

Temperature closed-loop control: Built-in thermocouple for real-time feedback, linked with the system's temperature control unit, dynamically adjusting power to suppress temperature drift.

Vacuum chamber integration: As the core component within the chamber, integrates heating, temperature measurement, water cooling, and sealing, simplifying the chamber structure.

Process stability: Low thermal expansion, high flatness, reduces wafer warpage, enhances process repeatability within and between wafers.