XYCOM XVME-103 VMEbus Product 10103-001

Brand/Manufacturer: XYCOM 

Order Number:   XVME-103

Country of Origin: USA

Condition: Original Brand

Lead Time: Available in stock

Payment Term: 100% TT In Advance


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Products Description

XYCOM  XVME-103 is a versatile memory expansion module designed for the VMEbus architecture. It features eight 32-pin JEDEC sockets arranged in two independent banks, supporting up to 4 MB of RAM, 8 MB of EPROM, or 4 MB of Flash/EEPROM. With an onboard battery backup circuit for CMOS RAM protection during power failures, it is IEEE 1014-1987 Rev C1 compliant. This module is essential for industrial automation, data acquisition, and control systems requiring flexible non-volatile memory expansion.

XYCOM XVME-103 VMEbus Product 10103-001.png

I. Basic Product Information

Brand: XYCOM (belongs to Acromag Xembedded)

Model: XVME-103, original part number 10103-001 / DS-74103-001

Form: 3U single-height VMEbus standard slave memory expansion board, not including CPU or I/O card

Positioning: To expand independent RAM, EPROM, Flash, EEPROM program / cache storage areas for the entire XVME series VME master control (601/674/675/655)

Life Cycle: Factory-wide complete discontinuation, inventory consists of fully loaded test refurbished boards + a small amount of brand-new original surplus

Bus Role: Pure VME Slave device, A24/A16 address, D16/D08 data width, compatible with IEEE 1014 VME standard


Core Memory Hardware Architecture

Slot Layout

8-channel 32-pin JEDEC standard chip sockets, physically divided into two independent storage Banks, each group with 4 slots; the same Bank must install chips of the same model and speed

Support for storage media and maximum capacity

CMOS RAM: Maximum 4MB (with onboard battery for power failure protection)

EPROM: Maximum 8MB (firmware, control program固化)

Flash ROM: Maximum 4MB

EEPROM: Maximum 4MB (can be online erased formulas, parameters)

Read-write Characteristics

Native support for RMW (read - modify - write) bus cycle, compatible with industrial real-time multi-task memory operations; onboard voltage monitoring, when voltage is lower than 4.75V, memory is locked and reading/writing is prohibited to prevent data damage


 Power Failure Protection and Monitoring Circuit

Built-in lithium battery backup

Specifically supplies power for CMOS RAM, maintains memory data and RTC real-time clock for long-term preservation when the entire VME backplane is powered off

Multiple fault alarm logic (jumper selectable)

Low battery voltage: Red LED "BATT LOW" on the front panel lights up

Backup voltage insufficient: Configurable to trigger SYSFAIL global fault signal or SYSRESET system reset

Status Indicator Lights

Dual-path Bank activity LED on the front panel + battery fault LED, intuitive judgment of storage read/write and power supply status


Electrical and Mechanical Specifications

Power Supply Source: Fully derived from VME backplane P1 connector + 5V DC; control signals transmitted by P2 connector

Power Consumption: Typical working current 0.38A @ +5V, standby backup current extremely low

Form Factor: 3U single-height VME 233.35mm × 100mm standard size

Net Weight: Approximately 0.28kg, PCB with three-proof moisture-proof coating

Environmental Conditions

Standard operating temperature: 0℃ ~ +50℃

Storage temperature: -25℃ ~ +70℃

Humidity 5%–95% no condensation, withstands factory dust, mild vibration, industrial EMI interference; CE industrial safety certification



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