Product Description

AMAT 0100-00853 is a custom RF feed transmission cable assembly designed by Applied Materials for its semiconductor manufacturing equipment. It is mainly used for RF power transmission and impedance matching network connections in etching (Etch) or PVD/CVD devices. This component is mainly composed of a high-stability coaxial cable, and both ends are equipped with precise RF connectors to ensure low-loss and high-reliability RF signal transmission in plasma processing environments. 

The core of its design lies in: in the demanding semiconductor manufacturing environment, maintaining signal integrity and minimizing standing waves and insertion losses to the greatest extent. 

?? Key parameters (inferred based on similar AMAT RF components and industry standards)

Parameter item Specification

Characteristic impedance 50 Ω (±1Ω)

Frequency range DC ~ 4 GHz (some models can reach 18 GHz)Insertion loss ≤ 0.3 dB (typical value)

Voltage Standing Wave Ratio (VSWR) ≤ 1.3 (DC ~ 4 GHz), excellent components can reach ≤ 1.15

Rated power Depending on the specific wire diameter, typical value 2~12 kW (@ 40°C environment, inner conductor 100°C)

Operating temperature -55°C ~ +85°C (device end), some high-temperature models can reach +165°C

Contact resistance (inner conductor) < 1.0 mΩ

Insulation resistance > 5000 MΩ

Dielectric withstand voltage > 1000 V

Third-order intermodulation (PIM) < -160 dBc

Connector type Usually N-type (male/female) or 3.5mm (2.92mm) precision connectors

Cable type Half-rigid/ultra-flexible RF coaxial cable (similar to Sucoflex 104 or RFF series)

Sheath material Polyethylene (PE) or low smoke zero halogen flame retardant (LSZH) sheath

Bending radius Static > 25mm (ultra-flexible models can be smaller)

Mechanical life > 500 plug-ins

Typical application scenarios

Application fields Specific uses

Semiconductor etching equipment RF power feed matching network, connecting RF generator to cavity electrode, driving plasma

PVD/CVD film deposition Transmission of RF bias power, controlling ion bombardment energy of substrate

High-power laser/dry etching equipment Power transmission (>5kW), frequency range approximately 400KHz~60MHz

5G base station antenna feed system Mobile communication base station antenna RF interconnection (DIN/N-type interface, requiring low VSWR, low PIM)

Aerospace/defense Radar, satellite communication, missile guidance in high-reliability RF interconnection

Medical equipment RF imaging, diagnostic and therapeutic equipment in signal transmission