ABB 5SHX08F4502 3BHB003387R0101 IGCT

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An IGCT that cannot block the reverse voltage is called an asymmetric IGCT, abbreviated A-IGCT. They typically have reverse breakdown ratings of tens of volts. A-IGCT is used in parallel to reverse pilot diodes (for example, in voltage source inverters) or where reverse voltage never occurs (for example, in switching power supplies or DC traction choppers).

The asymmetric IGCT 5SHX08F4502 3BHB003387R0101 can be manufactured in the same package with the anti-pilot diode. These are called RC-IGCTs and are used for reverse conduction IGCTs.

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5SHX08F4502 3BHB003387R0101 IGCT is a special type of thyristor. It is composed of gate unit and gate commutated thyristor (GCT) wafer device. The close combination of the grid unit and the wafer device ensures the rapid reversal of the conduction current from the cathode to the grid. The wafer device is similar to a gate turn-off thyristor (GTO). They can be turned on and off by gate signals and withstand higher voltage rise rates (dv/dt), so buffers are not required for most applications.

ABB 5SHX08F4502 3BHB003387R0101 Special type of thyristor

The 5SHX08F4502 3BHB003387R0101 IGCT structure is very similar to GTO thyristors. In IGCT, the gate turn-off current is greater than the anode current. This results in the complete elimination of minority carrier injection from lower PN junctions and faster turn-off times. The main difference is the reduction in unit size, and a more robust gate connection with lower inductance in the gate drive circuit and drive circuit connections. The very high gate current and the rapid dI/dt rise of the gate current mean that the gate driver cannot be connected to the IGCT using conventional wires. The drive circuit PCB is integrated into the packaging of the device. The drive circuit surrounds the device and uses a large circular conductor attached to the edge of the IGCT. The large contact area and short distance reduce the inductance and resistance of the connection.

Compared to the GTO, the 5SHX08F4502 3BHB003387R0101 IGCT has a much faster turn-off time, which allows it to operate at much higher frequencies – up to several thousand Hertz for a very short period of time. However, due to the high switching loss [de], typical operating frequencies are up to 500 Hz.

5SHX08F4502 3BHB003387R0101 IGCT with or without reverse blocking capability. Due to the need for a long, low-doping P1 region, the reverse blocking capability increases the forward voltage drop.

An IGCT capable of blocking the reverse voltage is called a symmetric IGCT, abbreviated S-IGCT. In general, the reverse blocking voltage rating is the same as the forward blocking voltage rating. Typical applications of symmetrical IGCT 5SHX08F4502 3BHB003387R0101 are current source inverters.